A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...

Abstract: In this paper, a concept for the in-situ detection of humidity-driven degradation of IGBT modules (i.e., increased leakage current and reduced breakdown voltage) is tested for its robustness ...

Wilsonville, OR. Mentor Graphics today announced a new MicReD Power Tester 600A product, which tests electric and hybrid vehicle (EV/HEV) power electronics reliability during power cycling. The MicReD ...

Dissipated heat in a junction is one of the major effects that can influence the reliability of die-attach materials used in an IGBT’s chip. Power cycling tests are ideal to mimic the lifecycle of a ...

Abstract: The parallel connection of Si IGBT/SiC MOSFETs is an important research topic to achieve the balance between cost and performance and to utilize the characteristics of each. In this study, ...

Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...

LINCOLN, England, Oct. 31, 2018 /CNW/ - Dynex Power Inc. (TSXV: DNX), a leading manufacturer of high power semiconductors and electronic equipment, is pleased to announce the launch of ...